insulated datasheet

Huajing Microelectronics

BT40T60ANF - Insulated gate bipolar transistor

Mar 22, 2018 · 79 Hits ...

Huajing Microelectronics

BT60N60ANF - Insulated gate bipolar transistor

Mar 22, 2018 · 22 Hits ...

Infineon

FZ1000R65KE4 - Highly insulated module

Sep 3, 2024 · 20 Hits • Electrical features - VCES = 6500 V - IC nom = 1000 A / ICRM = 2000 A - Low VCE,sat • Mechanical features - Extended storage temperature down to Tst...

International Rectifier

G4PC30F - INSULATED GATE BIPOLAR TRANSISTOR

Sep 9, 2008 · 19 Hits www.DataSheet4U.com C Fast Speed IGBT • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • G...

Thinki Semiconductor

XS4202 - 200Volt Insulated Fast Recovery Diode

Aug 22, 2016 · 19 Hits · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Curr...

Toshiba Semiconductor

GT45F123 - Insulated Gate Bipolar Transistor

Sep 3, 2014 · 18 Hits thin the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling ...

Huajing Microelectronics

BT40T60ANFD - Insulated gate bipolar transistor

Mar 22, 2018 · 15 Hits ...

International Rectifier

IRGP4063DPBF - INSULATED GATE BIPOLAR TRANSISTOR

Feb 15, 2007 · 14 Hits • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of ...

Powerex Power Semiconductors

RM600DY-66S - HIGH POWER/ HIGH SPEED SWITCHING USE INSULATED TYPE

Apr 16, 2005 · 13 Hits High Voltage Diode) Module ABSOLUTE MAXIMUM RATINGS (Tj = 25°C) Symbol VRRM VDRM VR(DC) Parameter Repetitive peak reverse voltage Non-repetitive peak...

International Rectifier

IRG7PH35UD-EP - INSULATED GATE BIPOLAR TRANSISTOR

Apr 25, 2011 · 13 Hits • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature...

Thinki Semiconductor

FML22S - 10 Ampere Insulated Common Cathode Fast Recovery Half Bridge Rectifiers

Apr 18, 2016 · 13 Hits Latest GPP technology with super fast recovery time Low forward voltage drop High current capability Low reverse leakage current High surge current ca...

Thinki Semiconductor

FML32S - 200Volt Insulated Fast Recovery Diode

Aug 4, 2016 · 12 Hits · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Curr...

International Rectifier

IRGP4062DPBF - INSULATED GATE BIPOLAR TRANSISTOR

Nov 22, 2006 · 12 Hits C • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA G •...

International Rectifier

IRG4PH20K - INSULATED GATE BIPOLAR TRANSISTOR

Jul 4, 2007 · 12 Hits • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high swit...

International Rectifier

IRGP4066DPBF - INSULATED GATE BIPOLAR TRANSISTOR

Feb 5, 2014 · 11 Hits • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100...

Thinki Semiconductor

FRH20A15 - 20.0 Ampere Insulated Dual Common Anode Schottky Barrier Rectifiers

Jul 10, 2024 · 11 Hits Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Applicat...

Huajing Microelectronics

BT40T60AKF - Insulated gate bipolar transistor

Mar 22, 2018 · 9 Hits ...

Mitsubishi Electric Semiconductor

QM150DY-H - HIGH POWER SWITCHING USE INSULATED TYPE

Apr 16, 2005 · 9 Hits rent Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage...