IRGBC20U

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

IRGBC20U Features

* Switching-loss rating includes all "tail" losses

* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 6.5A n-channel Description Insulated Gate Bipolar Transistors (IGBT

IRGBC20U General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGBC20U Datasheet (163.68 KB)

IRGBC20U Datasheet Preview — Preview of IRGBC20U PDF

Datasheet Details

Part number:

IRGBC20U

Manufacturer:

International Rectifier

File Size:

163.68 KB

Description:

Insulated gate bipolar transistor.

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IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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IRGBC20U Features

IRGBC20U General Description

Datasheet Details

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