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IRGBC20KD2-S

INSULATED GATE BIPOLAR TRANSISTOR

IRGBC20KD2-S Features

* Short circuit rated -10µs @125°C, VGE = 15V

* Switching-loss rating includes all "tail" losses

* HEXFREDTM soft ultrafast diodes

* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C G E n- cha nnel VCES = 600V VCE(sat)

IRGBC20KD2-S General Description

Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated.

IRGBC20KD2-S Datasheet (150.51 KB)

Preview of IRGBC20KD2-S PDF

Datasheet Details

Part number:

IRGBC20KD2-S

Manufacturer:

International Rectifier

File Size:

150.51 KB

Description:

Insulated gate bipolar transistor.

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IRGBC20KD2-S INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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