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IRGBC20S INSULATED GATE BIPOLAR TRANSISTOR

IRGBC20S Description

PD - 9.687A IRGBC20S INSULATED GATE BIPOLAR TRANSISTOR .
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

IRGBC20S Features

* Switching-loss rating includes all "tail" losses

IRGBC20S Applications

* TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter

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Datasheet Details

Part number
IRGBC20S
Manufacturer
International Rectifier
File Size
93.90 KB
Datasheet
IRGBC20S-InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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