IRGBC20S

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

IRGBC20S Features

* Switching-loss rating includes all "tail" losses

* Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 600V VCE(sat) ≤ 2.4V @VGE = 15V, I C = 10A n-channel Description Insulated Gate Bipolar Transistors

IRGBC20S General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGBC20S Datasheet (93.90 KB)

IRGBC20S Datasheet Preview — Preview of IRGBC20S PDF

Datasheet Details

Part number:

IRGBC20S

Manufacturer:

International Rectifier

File Size:

93.90 KB

Description:

Insulated gate bipolar transistor.

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IRGBC20S INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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IRGBC20S Features

IRGBC20S General Description

Datasheet Details

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