IRGBC20F

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

IRGBC20F Features

* Switching-loss rating includes all "tail" losses

* Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 2.8V @VGE = 15V, IC = 9.0A n-channel Description Insulated Gate Bipolar Transistors (

IRGBC20F General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, h.

IRGBC20F Datasheet (159.24 KB)

IRGBC20F Datasheet Preview — Preview of IRGBC20F PDF

Datasheet Details

Part number:

IRGBC20F

Manufacturer:

International Rectifier

File Size:

159.24 KB

Description:

Insulated gate bipolar transistor.

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IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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IRGBC20F Features

IRGBC20F General Description

Datasheet Details

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