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U. R L. O 1639 EC #E7 Fi le I GN ZE D TO-220 Isolated MT2 MT1 T Internally Triggered Triacs (4 A to 15 A) E3 General Description Teccor’s Q

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U. R L. O 1639 EC #E7 Fi le I GN ZE D TO-220 Isolated MT2 MT1 T Internally Triggered Triacs (4 A to 15 A) E3 General Description Teccor’s Q

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U. R L. O 1639 EC #E7 Fi le I GN ZE D TO-220 Isolated MT2 MT1 T Internally Triggered Triacs (4 A to 15 A) E3 General Description Teccor’s Q

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U. R L. O 1639 EC #E7 Fi le I GN ZE D TO-220 Isolated MT2 MT1 T Internally Triggered Triacs (4 A to 15 A) E3 General Description Teccor’s Q

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INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept

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MITSUBISHI SEMICONDUCTOR MGFC36V3436 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3436 is an internally impedan

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INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept

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NE5532, SA5532, SE5532, NE5532A, SE5532A Internally Compensated Dual Low Noise Operational Amplifier The 5532 is a dual high-performance low noise op

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NE5532, SA5532, SE5532, NE5532A, SE5532A Internally Compensated Dual Low Noise Operational Amplifier The 5532 is a dual high-performance low noise op

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FLM6472-6F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 38.5dBm (Typ.) • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 37% (

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FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.0dBm (Typ.) • High Gain: G1dB = 7.0dB (Typ.) • High PAE: hadd = 2

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STGB10NB40LZT4 Automotive-grade 10 A, 410 V internally clamped IGBT Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagra

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a FEATURES Pretrimmed to ± 0.5% Max 4-Quadrant Error All Inputs (X, Y and Z) Differential, High Impedance for [(X1–X2)(Y1–Y2)/10] + Z2 Transfer Functi

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Data Sheet FEATURES Pretrimmed to ±0.25% maximum 4-quadrant error (AD534L) All inputs (X, Y, and Z) differential, high impedance for [(X1 − X2)(Y1 − Y

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7$% 7$% ,3$.     72  STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr

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Ordering number : EN*5793 CMOS IC LC378000RP Internally Synchronized Silicon Gate 8M (1,048,576word × 8-bit, 524,288-word × 16-bit) Mask ROM Prelimi

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Order this document by MC1436/D MC1436, C High Voltage, Internally Compensated Operational Amplifiers The MC1436, C was designed for use as a summin

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP20N40CL/D Advanced Information IGBT SMARTDISCRETES™ Internally Clamped, N-Channel

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< C band internally matched power GaAs FET > MGFC38V5867 5.8 – 6.75 GHz BAND / 6W DESCRIPTION The MGFC38V5867 is an internally impedance-matched GaAs

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< C band internally matched power GaAs FET > MGFC38V6472 6.4 – 7.2 GHz BAND / 6W 11.3 DESCRIPTION The MGFC38V6472 is an internally impedance-matched

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