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INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept

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Ordering number : EN*5793 CMOS IC LC378000RP Internally Synchronized Silicon Gate 8M (1,048,576word × 8-bit, 524,288-word × 16-bit) Mask ROM Prelimi

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NE5532, SA5532, SE5532, NE5532A, SE5532A Internally Compensated Dual Low Noise Operational Amplifier The 5532 is a dual high-performance low noise op

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FEATURES  High Output Power: P1dB=42.5dBm (Typ)  High Gain: G1dB=10.0dB (Typ.)  High PAE: add=40 %( Typ.)  Frequency Band: 5.9~6.4GHz  Impedance

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a FEATURES Pretrimmed to ± 0.5% Max 4-Quadrant Error All Inputs (X, Y and Z) Differential, High Impedance for [(X1–X2)(Y1–Y2)/10] + Z2 Transfer Functi

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP20N40CL/D Advanced Information IGBT SMARTDISCRETES™ Internally Clamped, N-Channel

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INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept

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INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept

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INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept

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NE5532, SA5532, SE5532, NE5532A, SE5532A Internally Compensated Dual Low Noise Operational Amplifier The 5532 is a dual high-performance low noise op

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www.DataSheet4U.com EIC7785-10 UPDATED 04/12/2006 7.70-8.50 GHz 10-Watt Internally Matched Power FET Excelics EIC7785-10 .827±.010 .669 .120 MIN FE

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EIB1213-2P UPDATED 06/14/06 12.75-13.25GHz 2W Internally Matched Power FET FEATURES • • • • • • • 12.75-13.25 GHz Bandwidth Input/Output Impedance M

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plerowTM ALE2045T3 Internally Matched LNA Module Features · S21 = 25.7 dB @ 1920 MHz = 24.3 dB @ 2170 MHz · NF of 0.70 dB over Frequency · Uncondition

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FLM5359-45F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=46.5dBm(Typ.) • High Gain: G1dB=8.5dB(Typ.) • High PAE: hadd=36%(Typ.) •

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FLM5964-4F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.5dBm (Typ.) • High Gain: G1dB =10.0dB (Typ.) • High PAE: hadd = 37% (

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FLM0910-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηa

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ELM1314-30F/001 Ku-Band Internally Matched FET FEATURES •High Output Power: P1dB=44.5dBm(typ.) •High Gain: G1dB=5.5dB(typ.) •High PAE: ηadd=22%(typ.)

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Data Sheet FEATURES Pretrimmed to ±0.25% maximum 4-quadrant error (AD534L) All inputs (X, Y, and Z) differential, high impedance for [(X1 − X2)(Y1 − Y

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SLG59M1658V An Ultra-small 1.6 mm2, 17 mΩ, 2.5 A, 125°C-Rated Internally-protected Integrated Power Switch with Discharge General Description The SL

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SLG59M1657V An Ultra-small 3 mm2, 8.4 mΩ, 4 A, 125°C-Rated Internally-protected Integrated Power Switch General Description The SLG59M1657V is a hig

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