GD18N40LZ Datasheet, igbt equivalent, STMicroelectronics

GD18N40LZ Features

• Igbt
• Designed for automotive applications and AEC-Q101 qualified
• 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
• ESD gate-emitter protection
• Gate-c

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Part number:

GD18N40LZ

Manufacturer:

STMicroelectronics ↗

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858.10kb

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📄 Datasheet

Description:

Automotive-grade 390v internally clamped igbt. This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and

GD18N40LZ Application

• Applications and AEC-Q101 qualified
• 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
• ESD gate-emitter protection
• Gat

TAGS

GD18N40LZ

STMicroelectronics

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