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GD1000HFX170P2S IGBT

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Description

GD1000HFX170P2S STARPOWER SEMICONDUCTOR GD1000HFX170P2S 1700V/1000A 2 in one-package General .
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

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Datasheet Specifications

Part number
GD1000HFX170P2S
Manufacturer
STARPOWER
File Size
189.12 KB
Datasheet
GD1000HFX170P2S-STARPOWER.pdf
Description
IGBT

Features

* Low VCE(sat) Trench IGBT technology
* 10μs short circuit capability
* VCE(sat) with positive temperature coefficient
* Maximum junction temperature 175oC
* Enlarged Diode for regenerative operation
* Isolated copper baseplate using DBC technology
* High power and therma

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