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® STGB10NB37LZ N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE STGB10NB37LZ s s s s s s V CES CLAMPED V CE(s at) < 1.8 V IC 1

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7$% 7$% ,3$.     72  STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr

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STGB10NB40LZT4 Automotive-grade 10 A, 410 V internally clamped IGBT Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagra

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7$% 7$% ,3$.     72  STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP20N35CL/D Advanced Information IGBT SMARTDISCRETES™ Internally Clamped, N-Channel

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STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features ■ AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 1

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19-2964; Rev 0; 8/03 KIT ATION EVALU E L B AVAILA www.DataSheet4U.com Parallelable, Clamped Two-Switch Power-Supply Controller IC General Descripti

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www.DataSheet.co.kr AN601 Vishay Siliconix Unclamped Inductive Switching Rugged MOSFETs For Rugged Environments The evolution of the power MOSFET h

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Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET GENERAL DESCRIPTION Protected N-channel enhancement

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www.DataSheet4U.com Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without pri

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STGB20N45LZAG, STGD20N45LZAG Datasheet Automotive-grade 450 V internally clamped IGBT ESCIS 300 mJ TAB TAB 2 3 1 D2PAK 23 1 DPAK C (2 or TAB) G

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STGB25N40LZAG, STGD25N40LZAG Datasheet Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ TAB TAB 2 3 1 D2PAK 23 1 DPAK C (2 or TAB) G

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MGP15N35CL, MGB15N35CL, MGC15N35CL Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic cir

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7$% 7$% ,3$.     72  STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr

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Spike Clamped Diode SCD120S General Features  Silicon Epitaxial Planar Diode  Highly Uniform VBR (±7%) guaranteed by Specification  Highly Unifor

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STGB20N40LZ, STGD20N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ Datasheet - production data TAB 3 1 D2PAK TAB 3 1 DPAK Feature

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Philips Semiconductors Product specification PowerMOS transistor Clamped logic level FET GENERAL DESCRIPTION Protected N-channel enhancement mode lo

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Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes GENERAL DESCRIPTION

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STGB20N45LZAG, STGD20N45LZAG Datasheet Automotive-grade 450 V internally clamped IGBT ESCIS 300 mJ TAB TAB 2 3 1 D2PAK 23 1 DPAK C (2 or TAB) G

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP20N40CL/D Advanced Information IGBT SMARTDISCRETES™ Internally Clamped, N-Channel

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