STGB18N40LZ Datasheet, Igbt, STMicroelectronics

STGB18N40LZ Features

• Igbt
• AEC Q101 compliant
• 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
• ESD gate-emitter protection
• Gate-collector high voltage clamping

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Part number:

STGB18N40LZ

Manufacturer:

STMicroelectronics ↗

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629.59kb

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📄 Datasheet

Description:

Eas 180 mj - 400 v - internally clamped igbt. This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and

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STGB18N40LZ

STMicroelectronics

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