STGB18N40LZ Datasheet (STMicroelectronics) - EAS 180 mJ - 400 V

STGB18N40LZ, EAS 180 mJ - 400 V - internally clamped IGBT

This application-specific IGBT utilizes the most advanced PowerMESH™ technology.

The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.

The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition sys

STGB18N40LZ Features

* AEC Q101 compliant

* 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH

* ESD gate-emitter protection

* Gate-collector high voltage clamping

* Logic level gate drive

* Low saturation voltage

* High pulsed current capability

* Gate and gate-emitter resistor Applicati