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STGB18N40LZ

EAS 180 mJ - 400 V - internally clamped IGBT

STGB18N40LZ Features

* AEC Q101 compliant

* 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH

* ESD gate-emitter protection

* Gate-collector high voltage clamping

* Logic level gate drive

* Low saturation voltage

* High pulsed current capability

* Gate and gate-emitter resistor Applicati

STGB18N40LZ General Description

This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition sys.

STGB18N40LZ Datasheet (629.59 KB)

Preview of STGB18N40LZ PDF

Datasheet Details

Part number:

STGB18N40LZ

Manufacturer:

STMicroelectronics ↗

File Size:

629.59 KB

Description:

Eas 180 mj - 400 v - internally clamped igbt.

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STGB18N40LZ EAS 180 400 internally clamped IGBT STMicroelectronics

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