STGB18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT

STMicroelectronics

Description

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT .
This application-specific IGBT utilizes the most advanced PowerMESH™ technology.

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Datasheet Specifications

Part number: STGB18N40LZ
Manufacturer: STMicroelectronics ↗
File Size: 629.59 KB
Datasheet: STGB18N40LZ_STMicroelectronics.pdf
Description: EAS 180 mJ - 400 V - internally clamped IGBT

Features

* AEC Q101 compliant
* 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
* ESD gate-emitter protection
* Gate-collector high voltage clamping
* Logic level gate drive
* Low saturation voltage
* High pulsed current capability
* Gate and gate-emitter resistor Applicati

STGB18N40LZ Distributors

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STGB18N40LZ EAS 180 400 internally clamped IGBT STMicroelectronics

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