Description
E (3) IGBTG1C2TABE3ESD
This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems.These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range.Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.Product status link STGB25N36LZAG STGD25N36LZAG STGI25N36
Features
- AEC-Q101 qualified.
- SCIS energy of 300 mJ @ TJ = 25 °C.
- Parts are 100% tested in SCIS.
- ESD gate-emitter protection.
- Gate-collector high voltage clamping.
- Logic level gate drive.
- Very low saturation voltage.
- High pulsed current capability.
- Gate and gate-emitter resistor.