* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. T S S OP D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 G2 D1 D2 G1 G2 (T OP V IE W) S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG
STG2454
SamHop Microelectronics
112.86 KB
Dual n-channel fet.
Gr Pr
STG2454
Ver 1.1
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
24V
ID
7A
R .
📁 Related Datasheet
STG200G65FD8AG - IGBT
(STMicroelectronics)
STG200G65FD8AG
Datasheet
Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing
C
Features
G E
EGCD
.
STG200M65F2D8AG - IGBT
(STMicroelectronics)
STG200M65F2D8AG
Datasheet
Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing
C
Features
• AEC-Q101 quali.
STG2017 - Dual N-Channel FET
(SamHop Microelectronics)
..
S T G 2017
S amHop Microelectronics C orp. May,18 2005
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S U.
STG2507 - Dual P-Channel FET
(SamHop Microelectronics)
..
S T G 2507
S amHop Microelectronics C orp. May,10 2005
Dual P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S .
STG1 - N-channel Power MOSFET
(STMicroelectronics)
STT6N3LLH6
N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT23-6L package
Datasheet - production data
4 5 6
3 2 1
SOT.
STG1218 - a quad channel analog switch
(STMicroelectronics)
STG1218
Datasheet
Dual supply, quad SPDT switch, 1.8 V and 3.3 V logic input patible
Features
• Wide operating voltage range – Total voltage: 2.7 .
STG15M120F3D7 - IGBT
(STMicroelectronics)
STG15M120F3D7
Datasheet
Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing
C G
Features
• 10 µs of short-circuit withstand.
STG15M120F3D8 - IGBT
(STMicroelectronics)
STG15M120F3D8
Datasheet
1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing
C G
Features
• 10 μs of short-circuit withstand.
