STG200G65FD8AG Datasheet - STMicroelectronics

STG200G65FD8AG IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthe.

STG200G65FD8AG Features

* G E EGCD Product status link STG200G65FD8AG

* AEC-Q101 qualified

* Low-loss series IGBT

* Low VCE(sat) = 1.52 V (typ.) at IC = 200 A

* Positive VCE(sat) temperature coefficient

* Tight parameter distribution

* Maximum junction temperature: TJ

STG200G65FD8AG-STMicroelectronics.pdf