Datasheet4U Logo Datasheet4U.com

STG15M120F3D7 - IGBT

STG15M120F3D7 Description

STG15M120F3D7 Datasheet Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing C G .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STG15M120F3D7 Features

* 10 µs of short-circuit withstanding time
* Low VCE(sat) = 1.85 V (typ. ) @ IC = 15 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distribution

STG15M120F3D7 Applications

* E
* Industrial motor control EGCD
* Industrial drives
* Solar inverters
* Uninterruptable power supplies (UPS)

📥 Download Datasheet

Preview of STG15M120F3D7 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • STG2017 - Dual N-Channel FET (SamHop Microelectronics)
  • STG2454 - Dual N-Channel FET (SamHop Microelectronics)
  • STG2507 - Dual P-Channel FET (SamHop Microelectronics)
  • STG3155 - Low voltage 0.5 Ohm Max single SPDT switch (ST Microelectronics)
  • STG3157 - Low voltage low on-resistance SPDT switch (ST Microelectronics)
  • STG3220 - Low voltage high bandwidth dual SPDT switch (ST Microelectronics)
  • STG3680 - MAX DUAL SPDT SWITCH (ST Microelectronics)
  • STG3682 - Low Voltage High Bandwidth Dual SPDT Switch (ST Microelectronics)

📌 All Tags

IGBT STMicroelectronics
STMicroelectronics STG15M120F3D7-like datasheet