STG15M120F3D7 Datasheet - STMicroelectronics

STG15M120F3D7 IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Further.

STG15M120F3D7 Features

* 10 µs of short-circuit withstanding time

* Low VCE(sat) = 1.85 V (typ.) @ IC = 15 A

* Positive VCE(sat) temperature coefficient

* Tight parameter distribution

* Maximum junction temperature: TJ = 175 °C Applications E

* Industrial motor control E

STG15M120F3D7-STMicroelectronics.pdf