STG15M120F3D7 Datasheet, Igbt, STMicroelectronics

STG15M120F3D7 Features

• Igbt
• 10 µs of short-circuit withstanding time
• Low VCE(sat) = 1.85 V (typ.) @ IC = 15 A
• Positive VCE(sat) temperature coefficient
• Tight parameter distr

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Part number:

STG15M120F3D7

Manufacturer:

STMicroelectronics ↗

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258.50kb

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📄 Datasheet

Description:

Igbt. This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IG

STG15M120F3D7 Application

• Applications E
• Industrial motor control EGCD
• Industrial drives
• Solar inverters
• Uninterruptable power s

TAGS

STG15M120F3D7

STMicroelectronics

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