STG15M120F3D8 - IGBT
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Further
STG15M120F3D8 Features
* 10 μs of short-circuit withstand time
* Low VCE(sat) = 1.85 V (typ.) at IC = 15 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distribution
* Minimized junction temperature: TJ = 175 °C Applications E
* Motor control EGCD
