STG15M120F3D8 Datasheet - STMicroelectronics

IGBT

STG15M120F3D8 Features

* 10 μs of short-circuit withstand time

* Low VCE(sat) = 1.85 V (typ.) at IC = 15 A

* Positive VCE(sat) temperature coefficient

* Tight parameter distribution

* Minimized junction temperature: TJ = 175 °C Applications E

* Motor control EGCD

STG15M120F3D8 General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Further.

STG15M120F3D8 Datasheet (219.76 KB)