STG2507 Datasheet - SamHop Microelectronics

STG2507 Dual P-Channel FET

www.DataSheet4U.com S T G 2507 S amHop Microelectronics C orp. May,10 2005 Dual P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( mW ) Max ID 6.2A R DS (ON) S uper high dense cell design for low R DS (ON ). 17 @ V G S = -4.5V 25 @ V G S = -2.5V R ugged and reliable. S urface Mount P ackage. D2 8 S2 7 S2 6 G2 5 T S S OP 1 (T OP V IE W) 1 2 3 4 D1 S1 S1 G1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P aramete.

STG2507_SamHopMicroelectronics.pdf