STG8206 Datasheet - SamHop Microelectronics

STG8206 Dual N-Channel Enhancement Mode Field Effect Transistor

www.DataSheet4U.com S T G 8206 S amHop Microelectronics C orp. Dec,27.2004 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 6A R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = 4.5V 30 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. D2 8 S2 7 S2 6 G2 5 T S S OP 1 (T OP V IE W) 1 2 3 4 D1 S1 S1 G1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P aramet.

STG8206_SamHopMicroelectronics.pdf

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Datasheet Details

Part number:

STG8206

Manufacturer:

SamHop Microelectronics

File Size:

598.76 KB

Description:

Dual n-channel enhancement mode field effect transistor.

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STG8206 STG8206 Dual N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics

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