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STG8209 Datasheet - SamHop Microelectronics

STG8209 Dual N-Channel Enhancement Mode Field Effect Transistor

www.DataSheet4U.com S T G 8209 S amHop Microelectronics C orp. Dec,29.2005 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 6A R DS (ON) S uper high dense cell design for low R DS (ON ). 26 @ V G S = 4.0V 40 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. D1 D2 T S S OP D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 G2 G1 G2 (T OP V IE W) S1 S2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C.

STG8209_SamHopMicroelectronics.pdf

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Datasheet Details

Part number:

STG8209

Manufacturer:

SamHop Microelectronics

File Size:

659.39 KB

Description:

Dual n-channel enhancement mode field effect transistor.

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STG8209 STG8209 Dual N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics

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