STG200M65F2D8AG Datasheet, Igbt, STMicroelectronics

STG200M65F2D8AG Features

• Igbt
• AEC-Q101 qualified
• Low-loss series IGBT G
• Low VCE(sat) = 1.55 V (typ.) at IC = 200 A
• Positive VCE(sat) temperature coefficient
• Ti

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Part number:

STG200M65F2D8AG

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STMicroelectronics ↗

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📄 Datasheet

Description:

Igbt. This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IG

STG200M65F2D8AG Application

• Applications
• Main inverter (electric traction) Description This device is an IGBT developed using an advanced proprietary trench gate fi

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STG200M65F2D8AG

STMicroelectronics

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