STG200M65F2D8AG Datasheet - STMicroelectronics

STG200M65F2D8AG IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Further.

STG200M65F2D8AG Features

* AEC-Q101 qualified

* Low-loss series IGBT G

* Low VCE(sat) = 1.55 V (typ.) at IC = 200 A

* Positive VCE(sat) temperature coefficient

* Tight parameter distribution

* Maximum junction temperature: TJ = 175 °C E

* 6 µs minimum short-ci

STG200M65F2D8AG-STMicroelectronics.pdf