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STG200M65F2D8AG - IGBT

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STMicroelectronics

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STG200M65F2D8AG IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STG200M65F2D8AG

Datasheet Details

Part number	STG200M65F2D8AG
Manufacturer	STMicroelectronics
File Size	301.13 KB
Description	IGBT
Datasheet	STG200M65F2D8AG Datasheet
Additional preview pages of the STG200M65F2D8AG datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

AEC-Q101 qualified.
Low-loss series IGBT G.
Low VCE(sat) = 1.55 V (typ. ) at IC = 200 A.
Positive VCE(sat) temperature coefficient.
Tight parameter distribution.
Maximum junction temperature: TJ = 175 °C E.
6 µs minimum short-circuit withstanding time at TJ = 150 °C EGCD.

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Published: Apr 3, 2020 |