STG200M65F2D8AG - IGBT
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Further
STG200M65F2D8AG Features
* AEC-Q101 qualified
* Low-loss series IGBT G
* Low VCE(sat) = 1.55 V (typ.) at IC = 200 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distribution
* Maximum junction temperature: TJ = 175 °C E
* 6 µs minimum short-ci
