STG200M65F2D8AG IGBT

STMicroelectronics

Description

STG200M65F2D8AG Datasheet Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing C .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

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Datasheet Specifications

Part number: STG200M65F2D8AG
Manufacturer: STMicroelectronics ↗
File Size: 301.13 KB
Datasheet: STG200M65F2D8AG-STMicroelectronics.pdf
Description: IGBT

Features

* AEC-Q101 qualified
* Low-loss series IGBT G
* Low VCE(sat) = 1.55 V (typ. ) at IC = 200 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distribution
* Maximum junction temperature: TJ = 175 °C E
* 6 µs minimum short-ci

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STG200M65F2D8AG IGBT STMicroelectronics

STMicroelectronics STG200M65F2D8AG-like datasheet