STG2017 Datasheet (SamHop Microelectronics)

STG2017, Dual N-Channel FET

www.DataSheet4U.com S T G 2017 S amHop Microelectronics C orp.

May,18 2005 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 7A R DS (ON) S uper high dense cell design for low R DS (ON ).

20 @ V G S = 4.5V 28 @ V G S = 2.5V R ugged and reliable.

S urface Mount P ackage.

E S D P rotected.

T S S OP D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 G2 D1 D2 G1 G2 (T OP V IE W) S1 S2 ABS OLUTE MAXIMUM R ATINGS (T A=25