STG1

N-channel Power MOSFET

STMicroelectronics

STG1 Features

* Order code STT6N3LLH6 VDSS RDS(on) max ID PTOT 0.025 Ω (VGS= 10 V) 30 V 6 A 1.6 W 0.036 Ω (VGS= 4.5 V)

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* High avalanche ruggedness

* Low gate drive power losses Figure 1. Internal sc

STG1 General Description

This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Order code STT6N3LLH6 Table 1. Device summary Marking Package STG1 SOT23-6L Packa.

STG1 Datasheet (1.01 MB)

STG1 Datasheet Preview — Preview of STG1 PDF

Datasheet Details

Part number:

STG1

Manufacturer:

STMicroelectronics ↗

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1.01 MB

Description:

N-channel power mosfet.
STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data 4 5 6 3 2 1 SOT.

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STG1 N-channel Power MOSFET STMicroelectronics

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STG1 Features

STG1 General Description

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