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STG8211 Datasheet - SamHop Microelectronics

STG8211 Dual N-Channel Enhancement Mode Field Effect Transistor

www.DataSheet4U.com S T G 8211 S amHop Microelectronics C orp. Oct. 27. 2005 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 10A R DS (ON) S uper high dense cell design for low R DS (ON ). 13.5 @ V G S = 4.0V 18 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. T S S OP D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 G2 D1 D2 G1 G2 (T OP V IE W) S1 S2 ABS OLUTE MAXIMUM R ATINGS (T.

STG8211_SamHopMicroelectronics.pdf

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Datasheet Details

Part number:

STG8211

Manufacturer:

SamHop Microelectronics

File Size:

881.82 KB

Description:

Dual n-channel enhancement mode field effect transistor.

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STG8211 STG8211 Dual N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics

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