GD10NC60S Datasheet, Igbt, STMicroelectronics

GD10NC60S Features

• Igbt
• Optimized performance for medium operating frequencies up to 5 kHz in hard switching TAB
• Low on-voltage drop (VCE(sat)) t(s)Application uc
• Motor drive r

PDF File Details

Part number:

GD10NC60S

Manufacturer:

STMicroelectronics ↗

File Size:

1.21MB

Download:

📄 Datasheet

Description:

Fast igbt. te PThis IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off lebetween switching performance and low on

TAGS

GD10NC60S

STMicroelectronics

📁 Related Datasheet

GD10NC60HD - very fast IGBT (STMicroelectronics)
STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES rat.

GD10NC60KD - short-circuit rugged IGBT (STMicroelectronics)
STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Figure 1: Internal sche.

GD103SD - SWITCHING DIODE (GTM)
.. ISSUED DATE :2005/01/10 REVISED DATE : GD103SD S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 .

GD10HF60KD - short-circuit rugged IGBT (STMicroelectronics)
STGD10HF60KD Automotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode Datasheet - production data TAB 3 1 DPAK Features • Desig.

GD10MPS12A - Silicon Carbide Schottky Diode (GeneSiC)
GD10MPS12A 1200V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Meri.

GD10MPS12E - Silicon Carbide Schottky Diode (GeneSiC)
GD10MPS12E 1200V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Meri.

GD10MPS12H - Silicon Carbide Schottky Diode (GeneSiC)
GD10MPS12H 1200V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Meri.

GD10MPS17H - Silicon Carbide Schottky Diode (GeneSiC)
GD10MPS17H 1700V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Enhanced Surge and Aval.

GD10PJK120L1S - IGBT (STARPOWER)
GD10PJK120L1S STARPOWER SEMICONDUCTORTM GD10PJK120L1S Molding Type Module 1200V/10A PIM in one-package General Description STARPOWER IGBT Power Module.

GD14NC60K - IGBT (STMicroelectronics)
STGB14NC60K STGD14NC60K N-channel 14A - 600V -DPAK - D2PAK Short circuit rated PowerMESH™ IGBT General features Type STGB14NC60K STGD14NC60K VCES .