k-3878 Datasheet | Specifications & PDF Download

2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications • Low drain-source ON-resistan

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2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications • Low drain-source ON-resistan

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SVF3878PN_Datasheet 9A, 900V N-CHANNEL MOSFET DESCRIPTION SVF3878PN is an N-channel enhancement mode power MOS field effect transistor which is prod

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Silan Microelectronics SVF3878AP7_Datasheet 9A, 900V N-CHANNEL MOSFET DESCRIPTION SVF3878AP7 is an N-channel enhancement mode power MOS field effec

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SEMICONDUCTOR 2SK3878 Series N-Channel Power MOSFET (9A, 900Volts) RoHS RoHS Nell High Power Products DESCRIPTION The Nell 2SK3878 is a three-term

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LP3878-ADJ Micropower 800mA Low Noise Ceramic Stable Adjustable Voltage Regulator for 1V to 5V Applications May 2005 LP3878-ADJ Micropower 800mA L

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design LP3878-ADJ SNVS311D – MAY 2005 – REVISED F

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isc N-Channel Mosfet Transistor FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance :

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LP3878 Micropower 800mA Low Noise Ceramic Stable Voltage Regulator for Low Voltage Applications Designed for Use with Very Low ESR Output Capacitors

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Silan Microelectronics SVF3878P7_Datasheet 9A, 900V N-CHANNEL MOSFET DESCRIPTION SVF3878P7 is an N-channel enhancement mode power MOS field effect

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ISCFdÈ 3 3 text/html About keyword search: News Contact Employment Site part number search: Home 2N3878 (#23150) RFQ/Sample NPN Transistor Div

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www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataSheet4U.com Dat

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19-2062; Rev 0; 5/01 MAX3877/MAX3878 2.5Gbps, +3.3V Clock and Data Retiming ICs with Vertical Threshold Adjust General Description The MAX3877/MAX3

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Features n Wide VIN Range: 4V to 38V n ±1% 0.8V Voltage Reference n Extremely Fast Transient Response n tON(MIN): 43ns n No RSENSE™ Valley Current M

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum

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AOC3878 12V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RSS(ON) • With ESD protection to improve ba

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PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device 5962-9455501M3A Status Package Type Package Pins Package (1

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FUJITSU SEMICONDUCTOR DATA SHEET DS04-27706-1E ASSP For Power Supply Applications (Secondary battery) DC/DC Converter IC for Charging MB3878 s DES

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File No. 766 _________________________________ OOOBLJD Solid State Division Power Transistors 2N3878 2N5202 2N3879 2N6500 40375 2N3878 2N3879 2N520

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