Datasheet4U Logo Datasheet4U.com

2N3878 - NPN Transistor

2N3878 Description

isc Silicon NPN Power Transistor .
Excellent Safe Operating Area. Low Collector-Emitter Saturation Voltage. 100% avalanche tested. Minimum Lot-to-Lot variations for rob.

2N3878 Applications

* Designed for high speed switching and linear- amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A PC Co

📥 Download Datasheet

Preview of 2N3878 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2N3878
Manufacturer
INCHANGE
File Size
181.62 KB
Datasheet
2N3878-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2N3870 - SILICON CONTROLLED RECTIFIERS (New Jersey Semi-Conductor)
  • 2N3871 - SILICON CONTROLLED RECTIFIERS (New Jersey Semi-Conductor)
  • 2N3872 - Silicon Controlled Rectifiers (Motorola)
  • 2N3873 - Silicon Controlled Rectifiers (Motorola)
  • 2N3879 - NPN POWER SILICON TRANSISTOR (Microsemi)
  • 2N380 - PNP Transistor (Motorola)
  • 2N3800 - DUAL PNP SILICON ANNULAR TRANSISTORS (Motorola)
  • 2N3800A - DUAL PNP SILICON ANNULAR TRANSISTORS (Motorola)

📌 All Tags

INCHANGE 2N3878-like datasheet