| Part Number | Description | Manufacture |
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N-Channel MOSFET ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliable ■Lead free product is acquired ■SOT-23 Package ■Marking Code: A2SHB Case Material: Molded Plastic. UL Flammability Classification Rat |
 HAOHAI |
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P-Channel Enhancement Mode Power MOSFET ● VDS = -20V,ID = -2.6A RDS(ON) 160mΩ @ VGS=-2.5V RDS(ON) 120mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Application ● P |
 Bruckewell |
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N-Channel MOSFET LIMITS ±20 12 9 48 8 3.2 1.6 21 8.3 2.5 1 ‐55 to 150 UNIT V A mJ W W °C MAXIMUM 6 50 UNIT °C / W p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMB20N03V |
 Excelliance MOS |
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N&P-Channel MOSFET |
 UNIKC |
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N-Channel MOSFET Transistor ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters |
 INCHANGE |
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Low voltage high current power MOSFET st 6 (V) 8 10 102 101 175ඓ 25ඓ 100 0.2 0.4 4. 0.6 0.8 VSD ජ Notes : 1. VGS = 0V 2. 250த s Pulse Test 1.0 1.2 1.4 1.6 (V) 4000 3000 2000 1000 0 10-1 C oss C iss C rss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ජ Notes |
 ETC |
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P-Channel Enhancement Mode Power MOSFET VDS = -30V,ID = -4.2A RDS(ON) 130mΩ @ VGS=-2.5V RDS(ON) 75mΩ @ VGS=-4.5V RDS(ON) 55mΩ @ VGS=-10V High power and current handing capability Lead free product is acquired Surface mount package Application PWM applications Load switch Power manage |
 Rectron |
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MOSFET •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •Excellentthermalbehavior •IntegratedESDprotectiondiode •Lowswitchinglosses(Eoss) •Productvalidationacc.JEDECStandard Benefits •Costcompetitivetechnology •Lowe |
 Infineon |
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N-Channel MOSFET Transistor ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
 Inchange Semiconductor |
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Power MOSFET 5°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Curre |
 International Rectifier |
| Total 67316 results |
