IRFP260N - Power MOSFET

Datasheet Summary

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

International Rectifier

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Datasheet Details

Part number	IRFP260N
Manufacturer	International Rectifier
File Size	189.46 KB
Description	Power MOSFET
Datasheet	IRFP260N Datasheet
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PD - 95010A IRFP260NPbF l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.04Ω G ID = 50A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Published: Jun 20, 2006 |