Samsung semiconductor
MR16R162GDF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(7 views)
Vishay
SI7431DP_RC - R-C Thermal Model Parameters
Si7431DP_RC
Vishay Siliconix
www.DataSheet4U.com
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been d
(7 views)
Saransk
KD210B1 - The letter designation of parameters for rectifier diodes
КД210А1, КД210Б1, КД210В1, КД210Г1
Буквенное обозначение параметров для выпрямительных диодов Uобр.и.max - максимально допустимое импульсное напряжен
(7 views)
Saransk
KD210G1 - The letter designation of parameters for rectifier diodes
КД210А1, КД210Б1, КД210В1, КД210Г1
Буквенное обозначение параметров для выпрямительных диодов Uобр.и.max - максимально допустимое импульсное напряжен
(7 views)
Etc
APD032 - PACKAGE MECHANICAL SPECIFICATIONS AND PARAMETERS
INTRODUCTION
PACKAGE MECHANICAL SPECIFICATIONS AND PARAMETERS
1. Parameter Definitions:
A = Distance from top of chip to top of glass. a = Photodiode
(6 views)
Vishay Siliconix
SI7415DN-RC - R-C Thermal Model Parameters
www.DataSheet4U.com
Si7415DN_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been
(6 views)
WOOHE
IRTP300L - infrared temperature probe technical parameters
IRTP300L
IRTP300L
IRTP300L ,,,, 。,,,, 。
:,,,,, ; :、、;、,、 .
IRTP300L :
: IRTP300L
: -20-300°C
: -10- 70 °C
: -20-80 °C
: 300ms(95%)
: 25 :1
(5 views)
Samsung semiconductor
MR18R162GDF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(5 views)
Samsung semiconductor
MR18R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(5 views)
Samsung semiconductor
MR18R162GDF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(5 views)
Samsung semiconductor
MR16R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(5 views)
Vishay Siliconix
SI6968BEDQ_RC - R-C Thermal Model Parameters
Si6968BEDQ_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been derived using curve
(5 views)
Samsung semiconductor
MR16R1624GEG0 - Key Timing Parameters
MR16R1624(8/G)EG0 MR18R1624(8/G)EG0
Change History
Version 0.1 (December 2003) - Preliminary
* First copy. * Based on the 1.0 ver. (July 2002) 256/288
(5 views)
Samsung semiconductor
MR16R1622DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(4 views)
Samsung semiconductor
MR16R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(4 views)
Samsung semiconductor
MR18R1622DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(4 views)
Samsung semiconductor
MR18R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(4 views)
Samsung semiconductor
MR18R1622DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0
Change History
Version 1.0 (July 2002)
* First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIM
(4 views)
Vishay Siliconix
SI7136DP-RC - R-C Thermal Model Parameters
www.DataSheet4U.com
Si7136DP_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been
(4 views)
Saransk
KD210A1 - The letter designation of parameters for rectifier diodes
КД210А1, КД210Б1, КД210В1, КД210Г1
Буквенное обозначение параметров для выпрямительных диодов Uобр.и.max - максимально допустимое импульсное напряжен
(4 views)