passivation Datasheet | Specifications & PDF Download

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR6PM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE CR6PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions

(12 views)

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR25A, BCR25B MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE BCR25A, BCR25B OUTLINE DRAWING 17 Dime

(12 views)

AG 12A … AG 12M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nenn

(11 views)

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR08AS LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR08AS OUTLINE DRAWING Dimensions in mm 4.4

(10 views)

MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR 〉 CR20EY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR20EY OUTL

(10 views)

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR1AM-8 LOW POWER USE PLANAR PASSIVATION TYPE BCR1AM-8 OUTLINE DRAWING φ5.0 MAX 4.4 Dimensions in mm 2 VOLTAGE

(10 views)

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR6CM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR6CM OUTLINE DRAWING 10.5 MAX 3.2±0.2 Dim

(9 views)

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR25A, BCR25B MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE BCR25A, BCR25B OUTLINE DRAWING 17 Dime

(9 views)

AG 12A … AG 12M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nenn

(9 views)

AG 3A … AG3M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nennstr

(9 views)

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR6PM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE CR6PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions

(8 views)

AG 12A … AG 12M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nenn

(8 views)

AG 6A … AG6M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nennstr

(8 views)

FR801S Thru FR807S   .129(3.3)  .1(2.54)    .403(10.26)  .385(9.8) .153(3.9)  .145(3.7)  .189(4.82)  .173(4.4)  .055(1.4) .043(1.1)    .624(15.8

(8 views)

FR801S Thru FR807S   .129(3.3)  .1(2.54)    .403(10.26)  .385(9.8) .153(3.9)  .145(3.7)  .189(4.82)  .173(4.4)  .055(1.4) .043(1.1)    .624(15.8

(8 views)

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CR05AS OUTLINE DRAWING Dimensions in mm 4.

(7 views)

MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR 〉 CR10CY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR10CY OUTL

(7 views)

AG 12A … AG 12M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nenn

(7 views)

AG 12A … AG 12M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nenn

(7 views)

AG 3A … AG3M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nennstr

(7 views)