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AG12M - Silicon Rectifier Cells with polysiloxan passivation
AG 12A … AG 12M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nenn.CR20EY - MEDIUM POWER/ INVERTER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR 〉 CR20EY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR20EY OUTL.CR08AS - LOW POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR08AS LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR08AS OUTLINE DRAWING Dimensions in mm 4.4.CR10C - MEDIUM POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR10C MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR10C OUTLINE DRAWING Dimensions in mm (1.CR6PM - MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR6PM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE CR6PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions .AG12A - Silicon Rectifier Cells with polysiloxan passivation
AG 12A … AG 12M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nenn.AG12D - Silicon Rectifier Cells with polysiloxan passivation
AG 12A … AG 12M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nenn.AG12G - Silicon Rectifier Cells with polysiloxan passivation
AG 12A … AG 12M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nenn.AG12K - Silicon Rectifier Cells with polysiloxan passivation
AG 12A … AG 12M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nenn.AG3A - Silicon Rectifier Cells with polysiloxan passivation
AG 3A … AG3M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nennstr.AG3J - Silicon Rectifier Cells with polysiloxan passivation
AG 3A … AG3M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nennstr.AG6A - Silicon Rectifier Cells with polysiloxan passivation
AG 6A … AG6M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nennstr.AG6G - Silicon Rectifier Cells with polysiloxan passivation
AG 6A … AG6M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nennstr.AG6M - Silicon Rectifier Cells with polysiloxan passivation
AG 6A … AG6M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nennstr.EM518G - General Purpose Rectifiers Glass Passivation Junction
EM513G Thru EM518G General Purpose Rectifiers Glass Passivation Junction DO-41 Features ‧High current capability ‧High surge current capability ‧Low.EM516G - General Purpose Rectifiers Glass Passivation Junction
EM513G Thru EM518G General Purpose Rectifiers Glass Passivation Junction DO-41 Features ‧High current capability ‧High surge current capability ‧Low.CR04 - LOW POWER USE GLASS PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE CR04AM OUTLINE DRAWING φ5.0 MAX 4.4 Dimensions in mm 2 VOLTAGE.CR05AS - LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CR05AS OUTLINE DRAWING Dimensions in mm 4..CR10CY - MEDIUM POWER/ INVERTER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR 〉 CR10CY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR10CY OUTL.CR20F - MEDIUM POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR20F MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR20F OUTLINE DRAWING Dimensions in mm 3 .