| Part Number | Description | Manufacture |
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Super Fast Recovery Diode 1)Low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S Manufacture Date zTaping Dimensions(Unit : mm) Data Sheet zLand Size Figure(Unit : mm) LPDS zStructure zAbsolute Maximum |
 ROHM |
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Super Fast Recovery Diode 1)Low switching loss 2)High current overload capacity LPDS zStructure zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S ձ Manufacture Date zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetiti |
 Rohm |
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Super Fast Recovery Diode 1)Low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S Manufacture Date zTaping Dimensions(Unit : mm) Data Sheet AEC-Q101 Qualified zLand Size Figure(Unit : mm) LPDS zStructure |
ROHM |
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Super Fast Recovery Diode 1)Low switching loss 2)High current overload capacity RFN20 TF6S ձ ղ zConstruction Silicon epitaxial planer type ᖺ᭶ ROHM : TO220NFM ձ ղ Manufacture Year Manufacture Week zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive p |
Rohm |
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Super Fast Recovery Diode 1) Low forward voltage 2) Low switching loss 3) High current overload capacity lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) f3.1±0.1 10.2±0.2 4.5±0.1 2.6±0.1 lStructure 3.95±0.1 28.56±0.2 9.05±0.1 6 15.05±0.1 16.0±0.1 3 R |
Rohm |
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Super Fast Recovery Diode 1) Cathode common dual type 2) Low VF 3) Low switching loss ① 1.2 1.3 0.8 (1) (2) (3) 2.54±0.5 2.54±0.5 ROHM : TO-220FN ① : Manufacture Date 14.0±0.5 2.6±0.5 0.75± 0.1 0.05 Structure (1) Anode (2) Cathode (3) Anode Construction Silicon ep |
ROHM |
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Super Fast Recovery Diode 1)Cathode common Dual type. (TO-220) 2)Low VF 3)Low switching loss 10.0±0.3 0.1 4.5±0.3 0.1 2.8±0.2 0.1 15.0±0.4 0.2 8.0 Construction Silicon epitaxial planer RFN20 T2D ① 1.2 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 ROHM : TO220FN ① d |
ROHM |
