sChottky Datasheet | Specifications & PDF Download

Schottky Barrier Rectifiers Production specification SL22F--SL245F Features  Metal silicon junction, majority carrier conduction  High surge capab

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MBRP3045N — Schottky Barrier Rectifier MBRP3045N Schottky Barrier Rectifier Applications • Switched mode power supply • Freewheeling diodes Features

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SN74LS74A Dual D-Type Positive Edge-Triggered Flip-Flop The SN74LS74A dual edge-triggered flip-flop utilizes Schottky TTL circuitry to produce high sp

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www.eicsemi.com SB5150 ~ SB5200 TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 150 ~ 200 Volts IO : 5.0 A

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ESAD83-004 (30A) (40V / 30A ) SCHOTTKY BARRIER DIODE Features Low VF Super high speed switching High reliability by planer design Outline drawings,

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R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃）   APPLICATIONS 

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SK12 SK115 SK12 SK115 SMD Schottky Barrier Rectifier Diodes SMD Schottky-Gleichrichterdioden Version 2017-01-26 ~ SMA / ~ DO-214AC 5± 0.2

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Trench Schottky Barrier Rectifiers 30SQ050 R-6 Reverse Voltage - 50V Forward Current - 30A FEATURES The plastic package carries Underwriters Laborat

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SEMICONDUCTOR TECHNICAL DATA MBRD5U100D SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATUR

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Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guard

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 150A Peak  Low Power

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 50A Peak  Low Power L

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1 1.A 2.K 3.A 72  Available RoHS* COMPLIANT 1 1.A 2.K 3.A 72 ) VRRM IF(AV) IFSM EAS IRRM dv/dt TJ,TSTG VBR IR=10mA TA=25 VF IF=5A IF=1

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PMBR5H150SS \ SR5H15 ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS Voltage 150 V Current 5A Features  Plastic package has Underwriters Laboratory Fl

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R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃）  、  APPLICATIONS  Low vol

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www.DataSheet.co.kr 1N5844 5.0AMP SCHOTTKY BARRIER RECTIFIERS FEATURES . Low forward voltage drop . High current capability . High reliability . Hig

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Switch-mode Schottky Power Rectifier MBRF20100CTG The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−sil

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www.DataSheet4U.com Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Car

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SM320AF thru SM3200AF Schottky Barrier Rectifiers 0.044(1.10) 0.035(0.90) 0.116(2.95) 0.088(2.25) 2 1 0.181(4.60) 0.155(3.95) 0.220(5.60) 0.189(4

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