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Datasheet,Version 2.1, August 30, 2011 ® Never stop thinking. CoolSET® - Q1 ICE2QR2280Z Revision History: August 30, 2011 Previous Version: Page

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UNISONIC TECHNOLOGIES CO., LTD TDA2030A LINEAR INTEGRATED CIRCUIT 18W HI-FI AUDIO AMPLIFIER AND 35W DRIVER  DESCRIPTION The UTC TDA2030A is a mon

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UNISONIC TECHNOLOGIES CO., LTD UC2844/45 LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE PWM CONTROLLERS „ DESCRIPTION The UTC UC2844/2845

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Datasheet, Version 2.3, 02 Apr 2013 C o ol SE T ™ -F3 ICE3A(B)0365/0565/1065/1565 ICE3A(B)2065/2565 ICE3A0565Z/2065Z ICE3A(B)2065I/3065I/3565I ICE3A(B

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w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com

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CoolMOS® Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accord

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW50N60H3 600V high speed switching ser

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TrenchStop® Series IGW40T120 Low Loss IGBT in TrenchStop® and Fieldstop technology C  Short circuit withstand time – 10s  Designed for : - Freq

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Machine Translated by Google MIX2018 4.8W Single Channel Class F Audio Power Amplifier describe MIX2018 is a high efficiency, filter-free 4.8W mono C

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UTC D313 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC D313 is designed for use in general purpose amplifier a

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www.DataSheet4U.com UNISONIC TECHNOLOGIES CO., LTD L4863 DUAL 2.2W AUDIO AMPLIFIER PLUS STEREO HEADPHONE FUNCTION DESCRIPTION The UTC L4863 is a dual

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IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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SKW07N120 www.DataSheet4U.com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eoff compared to previous genera

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UNISONIC TECHNOLOGIES CO., LTD 9018 NPN EPITAXIAL PLANAR TRANSISTOR AM/FM AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER  FEATURES * High Current Ga

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www.DataSheet4U.com Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Car

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Version 2.1, 30 Aug 2011 ® Never stop thinking. ICE3BR4765JZ Revision History: 2011-8-30 Previous Version: V2.0 Page 27 Subjects (major changes

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OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) prod

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IHW20N120R2 Soft Switching Series www.DataSheet4U.com Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode

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