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SSC8036GS1 - N-Channel Enhancement Mode MOSFET

General Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future

Key Features

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Datasheet Details

Part number SSC8036GS1
Manufacturer AFSEMI
File Size 181.13 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8036GS1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8036GS1 N-Channel Enhancement Mode MOSFET  Features  Applications VDS 30V VGS ±20V RDSon TYP 20mR@10V 30mR@4V5 ID 8.5A  Load Switch  Portable Devices  DCDC conversion  General Description  Pin configuration This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.0 http://www.afsemi.