SSC8036GS6 - N-Channel Enhancement Mode MOSFET

General Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Load Switch Portable Devices DCDC conversion Pin configuration Top View D 3 Package Informatio

Key Features

s.
VDS 30V VGS ±20V RDSon TYP 24mR@10V 36mR@4V5 ID 6A.
General.

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SSC8036GS6 n-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC8036GS6
Manufacturer	AFSEMI
File Size	121.71 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	SSC8036GS6 Datasheet

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Full PDF Text Transcription (Reference)

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SSC8036GS6 N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 24mR@10V 36mR@4V5 ID 6A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  Portable Devices  DCDC conversion Pin configuration Top View D 3  Package Information 12 GS ③ ①② SOT23 Units:mm SSC-V1.0 http://www.afsemi.