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SSC8036GS6B - N-Channel Enhancement Mode MOSFET

General Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Load Switch Portable Devices DCDC conversion Pin configuration Top View D 3 Package Informatio

Key Features

  • s.
  • VDS 30V VGS ±20V RDSon TYP 19mR@10V 23mR@4V5 ID 5A.
  • General.

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Datasheet Details

Part number SSC8036GS6B
Manufacturer AFSEMI
File Size 585.02 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8036GS6B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8036GS6B N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 19mR@10V 23mR@4V5 ID 5A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  Portable Devices  DCDC conversion Pin configuration Top View D 3  Package Information 12 GS ③ ①② SOT23 Units:mm SSC-V1.0 http://www.afsemi.com 1/6 Analog Future  Order information Device Package SSC8036GS6B SOT23 SSC8036GS6B Marking Shipping 3000/Tape&Reel  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current a VGS@4.