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SSC8036GSD - N-Channel Enhancement Mode MOSFET

General Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Load Switch Portable Devices DCDC conversion Pin configuration Top View DD S Package Informat

Key Features

  • s.
  • VDS 30V VGS ±20V RDSon TYP 39mR@10V 76mR@4V5 ID 4.5A.
  • General.

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Datasheet Details

Part number SSC8036GSD
Manufacturer AFSEMI
File Size 137.54 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8036GSD Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8036GSD N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 39mR@10V 76mR@4V5 ID 4.5A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  Portable Devices  DCDC conversion Pin configuration Top View DD S  Package Information 1D D G SSC-V1.0 http://www.afsemi.