SSC8120GS6 - N-Channel Enhancement Mode MOSFET

General Description

This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.

Applications Load Sw

Key Features

s VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 1.2A ESD 1.2K.
General.

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SSC8120GS6 n-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC8120GS6
Manufacturer	AFSEMI
File Size	170.12 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	SSC8120GS6 Datasheet

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Full PDF Text Transcription (Reference)

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SSC8120GS6 N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 1.2A ESD 1.2K  General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.  Applications  Load Switch  Portable Devices  DCDC Conversion  Pin configuration Top View  Package Information ③ ①② SOT23 Unit:mm SSC-V1.0 http://www.afsemi.