SSC8120GS6 Datasheet, AFSEMI

VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 1.2A ESD 1.2K
* General Description This device is a N-Channel enhancement mode MOSFET which is prod.

especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
* Applications
* Loa.

This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves .