SSC8120GS8 mosfet equivalent, n-channel enhancement mode mosfet.
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VDS
VGS
RDSon TYP
ID ESD
310mR@4V5
20V ±12V 490mR@2V5 0.8A 1.2K
850mR@1V8
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* General Description
This device is a N-Channel enhancement mode MOSF.
especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
* Package Information
A.
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves .
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