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SSC8120GS9 - N-Channel Enhancement Mode MOSFET

General Description

This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.

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Key Features

  • s.
  • VDS VGS RDSon TYP ID ESD 300mR@4V5 20V ±12V 440mR@2V5 0.75A 1.2K 800mR@1V8.
  • General.

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Datasheet Details

Part number SSC8120GS9
Manufacturer AFSEMI
File Size 268.61 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8120GS9 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8120GS9 N-Channel Enhancement Mode MOSFET  Features  VDS VGS RDSon TYP ID ESD 300mR@4V5 20V ±12V 440mR@2V5 0.75A 1.2K 800mR@1V8   General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Applications  Replace Digital Transistor  Battery Operated Systems  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers Pin Configuration Top View  Package Information Package:SOT723 Unit:mm Dim Min Typ Max A 0.430 -- 0.500 A1 0.000 -- 0.050 b 0.170 -- 0.270 b1 0.270 -- 0.370 c 0.080 -- 0.150 D 1.150 -- 1.250 E 1.