SSC8120GS9 mosfet equivalent, n-channel enhancement mode mosfet.
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VDS
VGS
RDSon TYP
ID ESD
300mR@4V5
20V ±12V 440mR@2V5 0.75A 1.2K
800mR@1V8
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* General Description
This device is a N-Channel enhancement mode MOS.
especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
Applications
* Replace D.
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves .
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