SSC8121GN1 Description
This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.
SSC8121GN1 Key Features
- 20V ±8V 190mR@-2V5 -1.0A
- General Description