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SSC8121GN1 - P-Channel Enhancement Mode MOSFET

General Description

resistance.

Key Features

  • s VDS VGS RDSon TYP ID 150mR@-4V5 -20V ±8V 190mR@-2V5 -1.0A 255mR@-1V8.
  • General.

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Datasheet Details

Part number SSC8121GN1
Manufacturer AFSEMI
File Size 141.25 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8121GN1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8121GN1 P-Channel Enhancement Mode MOSFET ⚫ Features VDS VGS RDSon TYP ID 150mR@-4V5 -20V ±8V 190mR@-2V5 -1.0A 255mR@-1V8 ⚫ General Description This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.