SSC8121GN1 mosfet equivalent, p-channel enhancement mode mosfet.
VDS VGS RDSon TYP
ID
150mR@-4V5
-20V ±8V 190mR@-2V5 -1.0A
255mR@-1V8
* General Description
This device is produced with high cell density DMOS trench
technolog.
such as portable equipment, power management
and other battery powered circuits, and low in-line power
dissipation are.
This device is produced with high cell density DMOS trench
technology, which is especially used to minimize on-state
resistance. This device particularly suits low voltage
applications such as portable equipment, power management
and other batte.
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