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SSC8125GS6 - P-Channel Enhancement Mode MOSFET

General Description

This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD.

These feathures make it suitable for use as a load switch or in PWM applications.

Package Information GS ③ ①② SOT23 Unit:

Key Features

  • s VDS VGS -20V ±8V RDSon TYP 36mR@-4V5 45mR@-2V5 57mR@-1V8 66mR@-1V5 ID ESD -4A 3kV.

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Datasheet Details

Part number SSC8125GS6
Manufacturer AFSEMI
File Size 88.57 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8125GS6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8125GS6 P-Channel Enhancement Mode MOSFET with ESD Protection  Features VDS VGS -20V ±8V RDSon TYP 36mR@-4V5 45mR@-2V5 57mR@-1V8 66mR@-1V5 ID ESD -4A 3kV  Applications  Load Switch  Portable Devices  DCDC Conversion  Pin configuration Top View D  General Description This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. These feathures make it suitable for use as a load switch or in PWM applications.  Package Information GS ③ ①② SOT23 Unit:mm SSC-1V0 http://www.afsemi.