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SSC8128GT8 - N-Channel Enhancement Mode MOSFET

General Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Desktop Computer Notebook Pin Configuration Top View Package Information Units:mm SSC-V1.0 http:/

Key Features

  • s.
  • VDS 25V VGS ±20V RDSon TYP 4.8mR@10V 6mR@4V5 ID 80A.
  • General.

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Datasheet Details

Part number SSC8128GT8
Manufacturer AFSEMI
File Size 93.16 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8128GT8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8128GT8 N-Channel Enhancement Mode MOSFET  Features  VDS 25V VGS ±20V RDSon TYP 4.8mR@10V 6mR@4V5 ID 80A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Desktop Computer  Notebook Pin Configuration Top View  Package Information Units:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8128GT8  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Drain Current Power Dissipation(1) Continuous Pulsed Operating and Storage Junction Temperature Range VGSS ID PD TJ, TSTG Ratings 25 ±20 80 200 2.