SSC8129GQ4 - P-Channel Enhancement Mode MOSFET

General Description

on-state resistance.

Key Features

s VDS -20V VGS ±12V RDSon TYP 9mR@-4V5V 13mR@-2V5 ID -18A.

SSC8129GQ4 p-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC8129GQ4
Manufacturer	AFSEMI
File Size	798.17 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	SSC8129GQ4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8129GQ4 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 9mR@-4V5V 13mR@-2V5 ID -18A  Applications  Load Switch  DCDC conversion  NB battery  Pin configuration  General Description Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.  Package Information SSC-1V0 Package: DFN3X3 Symbol A A1 A3 D E D1 E1 k b e L Dimenions Millimeters Min. Max. 0.700/0.800 0.800/0.900 0.000 0.050 0.203REF 2.924 3.076 2.924 3.076 2.350 2.550 1.700 1.900 0.450 0.550 0.270 0.370 0.650TYP 0.