SSC8129GS1 mosfet equivalent, p-channel enhancement mode mosfet.
VDS -20V
VGS ±12V
RDSon TYP 10mR@-4V5V 13mR@-2V5
ID -18A
* Applications
* Load Switch
* DCDC conversion
* NB battery
* Pin configuration
* G.
* Load Switch
* DCDC conversion
* NB battery
* Pin configuration
* General Description
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T.
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This device is produced with high cell density, DMOS
trench technology, which is especially used to minimize
on-state resistance. This device is particularly suited for
low voltage power management requiring a wild range
of given volta.
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