SSC8129GS1 - P-Channel Enhancement Mode MOSFET

General Description

on-state resistance.

Key Features

s VDS -20V VGS ±12V RDSon TYP 10mR@-4V5V 13mR@-2V5 ID -18A.

SSC8129GS1 p-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC8129GS1
Manufacturer	AFSEMI
File Size	804.57 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	SSC8129GS1 Datasheet

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Full PDF Text Transcription (Reference)

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SSC8129GS1 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 10mR@-4V5V 13mR@-2V5 ID -18A  Applications  Load Switch  DCDC conversion  NB battery  Pin configuration  General Description Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.  Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-1V0 http://www.afsemi.