SSC8336GS1 Description
Top View This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable for use as a load switch，power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter Systems. Package Information Ordering Information Device SSC8336GS1 Marking SSC 8336GS1 Package SOP8 Qty per Reel 2500...