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SSC8336GS1 - Dual N-Channel Enhancement Mode MOSFET

General Description

minimize on-state resistance.

Key Features

  • s.

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Datasheet Details

Part number SSC8336GS1
Manufacturer AFSEMI
File Size 341.97 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8336GS1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8336GS1 Dual N-Channel Enhancement Mode MOSFET  Features  Applications  Inverter; VDS VGS RDSon TYP ID 30V ±20V 16mR@10V 20mR@4V5 9A  Pin configuration  General Description Top View This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable for use as a load switch，power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter Systems.  Package Information  Ordering Information Device SSC8336GS1 Marking SSC 8336GS1 Package SOP8 Qty per Reel 2500 Reel Size 13 Inch SSC-1V0 http://www.afsemi.