SSC8K21JN3 Datasheet, AFSEMI

P-MOSFET VDS VGS -20V ±8V Schottky VR IR 20V 15uA RDSon TYP 130mR@-4V5 170mR@-2V5 230mR@-1V8 VF 370mV ID -2A IO 1A
* Applications
* Li Battery Charging
* H.

* Li Battery Charging
* High Side DC/DC Converter
* High Side Driver for Brushless DC Motor
* Power Mana.

SSC8K21JN3 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode. the tiny and thin outline saves PCB consumption.
* Package Information DF.