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SSC8K21JN3 - P-Channel Enhancement Mode MOSFET

General Description

SSC8K21JN3 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode.

the tiny and thin outline saves PCB consumption.

Package Information DFN3X2-8L Pin connections SSC-1V0 http://www.afse

Key Features

  • s P-MOSFET VDS VGS -20V ±8V Schottky VR IR 20V 15uA RDSon TYP 130mR@-4V5 170mR@-2V5 230mR@-1V8 VF 370mV ID -2A IO 1A.

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Datasheet Details

Part number SSC8K21JN3
Manufacturer AFSEMI
File Size 279.33 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8K21JN3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8K21JN3 P-Channel Enhancement Mode MOSFET with Schottky Diode  Features P-MOSFET VDS VGS -20V ±8V Schottky VR IR 20V 15uA RDSon TYP 130mR@-4V5 170mR@-2V5 230mR@-1V8 VF 370mV ID -2A IO 1A  Applications  Li Battery Charging  High Side DC/DC Converter  High Side Driver for Brushless DC Motor  Power Management in Portable, Battery Powered Devices  Pin configuration  General Description SSC8K21JN3 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode. the tiny and thin outline saves PCB consumption.  Package Information DFN3X2-8L Pin connections SSC-1V0 http://www.afsemi.com 1/6 Analog Future SSC8K21JN3 SSC-1V0 http://www.afsemi.