VDS = 100V ID =100A RDS(ON) < 5.5mΩ @ VGS=10V (Type:4.3mΩ)
Application
BLDC
LED Backlighting
Package Marking and Ordering Information
Product ID
Pack
Marking
AP100.
, should be limited by total power dissipation.
2
AP100N10NF REV1.0
Typical Characteristics
AP100N10NF
100V N-Chan.
AP100N10NF
100V N-Channel Enhancement Mode MOSFET
The AP100N10NF uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protect.
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