AP10G03S mosfet equivalent, 30v n+p-channel enhancement mode mosfet.
VDS = 30V ID =12 A
RDS(ON) < 12mΩ @ VGS=10V VDS = -30V ID =-9.8 A
Only
RDS(ON) < -25mΩ @ VGS=10V
Application
Use
Battery protection Load switch Uninterruptible powe.
, should be limited by total power dissipation.
2
AP10G03S Rve3.8
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AP10G03S.
The AP10G03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
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TAGS
+P-Channel
Manufacturer
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