VDS = 30V ID =35A
RDS(ON) <12mΩ @ VGS=10V (Type:10mΩ)
Application
Lithium battery protection Wireless impact Mobile phone fast charging
Package Marking and Ordering .
, should be limited by total power dissipation.
2
AP10H03DF RVE3.2
Typical Characteristics
AP10H03DF
30V N+N-Chann.
AP10H03DF
30V N+N-Channel Enhancement Mode MOSFET
The AP10H03DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection o.
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TAGS
+N-Channel
Manufacturer
Related datasheet