AP15G02DF Datasheet, MOSFET, APM

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AP15G02DF Features and benefits

VDS = 20V ID =15.5A RDS(ON) < 35mΩ @ VGS=4.5V （Type：22mΩ） VDS = -20V ID =-14.8A RDS(ON) < 35mΩ @ VGS=-4.5V（Type：28mΩ） Application High Frequency Circuit low-power co.

AP15G02DF Application

, should be limited by total power dissipation. Unit V mΩ V uA nA S nC ns pF A V 2 AP15G02DF REV1.0 AP15G02DF 20V .

AP15G02DF Description

AP15G02DF 20V N+P-Channel Enhancement Mode MOSFET The AP15G02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection o.

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